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| SOT89 NPN SILICON PLANAR MEDIUM POWER TRANSISTOR ISSUE 3 - OCTOBER 1995 FEATURES * 1 Amp continuous current COMPLEMENTARY TYPEPARTMARKING DETAILS FCX591A N2 FCX491A C E C B ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current Power Dissipation Operating and Storage Temperature Range SYMBOL V CBO V CEO V EBO IC I CM P TOT T j:T stg VALUE 40 40 5 1 2 1 -65 to +150 UNIT V V V A A W C ELECTRICAL CHARACTERISTICS (at Tamb = 25C ). PARAMETER Breakdown Voltages SYMBOL V (BR)CBO V (BR)CEO V (BR)EBO Collector Cut-Off Currents Emitter Cut-Off Current Emitter Saturation Voltages I CBO, I CES I EBO V CE(sat) V BE(sat) Base-Emitter Turn-On Voltage Static Forward Current Transfer V BE(on) h FE 300 300 200 35 150 10 MIN. 40 40 5 100 100 100 0.3 0.5 1.1 1.0 MAX. UNIT CONDITIONS. V V V nA nA nA V V V V I C=100A I C=10mA* I E=100A V CB=30V, V CE=30V V EB=4V I C=500mA, I B=50mA* I C=1A, I B=100mA* I C=1A, I B=100mA* I C =1A, V CE=5V* I C=1mA, V CE=5V I C=500mA, V CE=5V* I C=1A, V CE=5V* I C=2A, V CE=5V* MHz I C=50mA, V CE=10V f=100MHz pF V CB=10V f=1MHz 900 Transitional Frequency Collector-Base Breakdown Voltage fT C obo *Measured under pulsed conditions. Pulse width=300s. Duty cycle 2% Spice parameter data is available upon request for this device For typical Characteristics graphs see FMMT491A datasheet 3 - 87 |
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